The lifetime of the minority charge carriers of semiconductors is determined by the method of measuring the decay time constant of the signal of the recombination process of nonequilibrium charge carriers in a semiconductor. Nonequilibrium charge carriers are generated by illumination of a sample with a radiation length of 1.05 μm (for Si), the decay process is detected by microwave absorption at a frequency of 12 GHz and recorded on an oscilloscope. The accuracy of the measurement is ± 10%, the msmeasurement time interval is is from 1μs to 10 μs, the sample size is 10x4x1 mm-3.
This is the only method of completely non-destructive non-contact measurement of the lifetime of minority charge carriers of semiconductors.
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